Nombor Bahagian Pengeluar : | IRFD113 |
---|---|
Status RoHS : | Mengandungi plumbum / Rosh tidak patuh |
Pengilang / jenama : | Electro-Films (EFI) / Vishay |
Keadaan Stok : | 355 pcs Stock |
Penerangan : | MOSFET N-CH 60V 800MA 4-DIP |
Kapal Dari : | Hong Kong |
Helaian data : | IRFD113.pdf |
Cara Penghantaran : | DHL/Fedex/TNT/UPS/EMS |
Bahagian No. | IRFD113 |
---|---|
Pengeluar | Electro-Films (EFI) / Vishay |
Penerangan | MOSFET N-CH 60V 800MA 4-DIP |
Status Status Percuma / Rosh Status | Mengandungi plumbum / Rosh tidak patuh |
Kuantiti Tersedia | 355 pcs |
Helaian data | IRFD113.pdf |
VGS (th) (Max) @ Id | 4V @ 250µA |
VGS (Max) | ±20V |
Teknologi | MOSFET (Metal Oxide) |
Pembekal Peranti Pakej | 4-HVMDIP |
Siri | - |
Rds On (Max) @ Id, VGS | 800 mOhm @ 800mA, 10V |
Kuasa Penyebaran (Max) | 1W (Tc) |
pembungkusan | Tube |
Pakej / Kes | 4-DIP (0.300", 7.62mm) |
Suhu Operasi | -55°C ~ 150°C (TJ) |
pemasangan Jenis | Through Hole |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Status Status Percuma / Rosh Status | Contains lead / RoHS non-compliant |
Input kemuatan (CISS) (Max) @ Vds | 200pF @ 25V |
Gate Charge (QG) (Max) @ VGS | 7nC @ 10V |
Jenis FET | N-Channel |
FET Ciri | - |
Drive Voltan (Max Rds On, Min Rds On) | 10V |
Parit untuk Source Voltan (Vdss) | 60V |
Penerangan terperinci | N-Channel 60V 800mA (Tc) 1W (Tc) Through Hole 4-HVMDIP |
Semasa - Drain berterusan (Id) @ 25 ° C | 800mA (Tc) |
MOSFET N-CH 50V 2.4A 4-DIP
MOSFET N-CH 60V 1.7A 4-DIP
MOSFET N-CH 200V 600MA 4-DIP
MOSFET N-CH 100V 1.3A 4-DIP
MOSFET N-CH 100V 1A 4-DIP
MOSFET N-CH 100V 1.3A 4-DIP
MOSFET N-CH 250V 450MA 4-DIP
MOSFET N-CH 200V 600MA 4-DIP
MOSFET N-CH 60V 2.5A 4-DIP
MOSFET N-CH 100V 1A 4-DIP