Nombor Bahagian Pengeluar : | SI4670DY-T1-GE3 |
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Status RoHS : | Lead percuma / RoHS Compliant |
Pengilang / jenama : | Electro-Films (EFI) / Vishay |
Keadaan Stok : | 2465 pcs Stock |
Penerangan : | MOSFET 2N-CH 25V 8A 8-SOIC |
Kapal Dari : | Hong Kong |
Helaian data : | SI4670DY-T1-GE3.pdf |
Cara Penghantaran : | DHL/Fedex/TNT/UPS/EMS |
Bahagian No. | SI4670DY-T1-GE3 |
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Pengeluar | Electro-Films (EFI) / Vishay |
Penerangan | MOSFET 2N-CH 25V 8A 8-SOIC |
Status Status Percuma / Rosh Status | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 2465 pcs |
Helaian data | SI4670DY-T1-GE3.pdf |
VGS (th) (Max) @ Id | 2.2V @ 250µA |
Pembekal Peranti Pakej | 8-SO |
Siri | TrenchFET® |
Rds On (Max) @ Id, VGS | 23 mOhm @ 7A, 10V |
Power - Max | 2.8W |
pembungkusan | Tape & Reel (TR) |
Pakej / Kes | 8-SOIC (0.154", 3.90mm Width) |
Nama lain | SI4670DY-T1-GE3TR SI4670DYT1GE3 |
Suhu Operasi | -55°C ~ 150°C (TJ) |
pemasangan Jenis | Surface Mount |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds | 680pF @ 13V |
Gate Charge (QG) (Max) @ VGS | 18nC @ 10V |
Jenis FET | 2 N-Channel (Dual) |
FET Ciri | Logic Level Gate |
Parit untuk Source Voltan (Vdss) | 25V |
Penerangan terperinci | Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SO |
Semasa - Drain berterusan (Id) @ 25 ° C | 8A |
Nombor Bahagian Asas | SI4670 |
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